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| FQD16N25C 250V N-Channel MOSFET March 2006 QFET FQD16N25C 250V N-Channel MOSFET Features * * * * * * 16A, 250V, RDS(on) = 0.27 @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 68 pF) Fast switching 100% avalanche tested Improved dv/dt capability (R) Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D D-PAK FQD Series G S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) Parameter FQD16N25C 250 16 10.1 64 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 432 16 160 5.5 160 1.28 -55 to +150 300 Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQD16N25C 0.78 110 Units C/W C/W (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQD16N25C Rev. A FQD16N25C 250V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQD16N25C FQD16N25C Device FQD16N25CTM FQD16N25CTF Package D-PAK D-PAK TC = 25C unless otherwise noted Reel Size 380mm 380mm Tape Width 16mm 16mm Quantity 2,500 2,000 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 8A VDS = 40 V, ID =8 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 250 -----2.0 ------ Typ -0.31 -----0.22 10.5 830 170 68 Max Units --10 100 100 -100 4.0 0.27 -1080 220 89 V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 125 V, ID = 16A, RG = 25 ---(Note 4, 5) 15 130 135 105 41 5.6 22.7 ---260 2.47 40 270 280 220 53.5 --- ---- VDS = 200 V, ID = 16A, VGS = 10 V (Note 4, 5) -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 16 A VGS = 0 V, IS = 16 A, dIF / dt = 100 A/s (Note 4) ------ 16 64 1.5 --- A A V ns C 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.7mH, IAS = 16A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 16A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature FQD16N25C Rev. A 2 www.fairchildsemi.com FQD16N25C 250V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics ID, Drain Current [A] ID, Drain Current [A] 10 1 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 1 150 C o 25 C 10 0 o -55 C o 10 0 Notes : 1. 250 s Pulse Test 2. TC = 25 Notes : 1. VDS = 40V 2. 250 s Pulse Test 10 -1 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.5 RDS(ON) [ ], Drain-Source On-Resistance IDR, Reverse Drain Current [A] 1.0 10 1 VGS = 10V 0.5 10 0 150 VGS = 20V 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 0.0 0 10 20 30 40 50 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 3000 Figure 6. Gate Charge Characteristics 2500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 VGS, Gate-Source Voltage [V] 10 VDS = 50V VDS = 125V VDS = 200V Capacitance [pF] 2000 8 Ciss 1500 Coss Crss Notes : 1. VGS = 0 V 2. f = 1 MHz 0 1 6 1000 4 500 2 Note : ID = 15.6A 0 -1 10 0 10 10 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQD16N25C Rev. A 3 www.fairchildsemi.com FQD16N25C 250V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 8.9 A 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 20 10 2 Operation in This Area is Limited by R DS(on) 10 s 100 s 1ms 15 ID, Drain Current [A] 10 1 ID, Drain Current [A] 10ms 100ms DC 10 10 0 5 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -1 0 0 10 10 1 10 2 25 50 75 100 o 125 150 VDS, Drain-SourceVoltage[V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 0 D=0.5 Z? JC Thermal Response (t), 0.2 10 -1 0.1 0.05 0.02 0.01 PDM t1 t2 10 -2 single pulse * Notes : 0 (t) 1. Z? JC = 0.78 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z? JC (t) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] FQD16N25C Rev. A 4 www.fairchildsemi.com FQD16N25C 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQD16N25C Rev. A 5 www.fairchildsemi.com FQD16N25C 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQD16N25C Rev. A 6 www.fairchildsemi.com FQD16N25C 250V N-Channel MOSFET Mechanical Dimensions D-PAK 6.60 0.20 5.34 0.30 (0.50) (4.34) (0.50) 0.70 0.20 2.30 0.10 0.50 0.10 0.60 0.20 6.10 0.20 2.70 0.20 9.50 0.30 0.91 0.10 0.80 0.20 MAX0.96 2.30TYP [2.300.20] 0.76 0.10 2.30TYP [2.300.20] 0.89 0.10 0.50 0.10 1.02 0.20 2.30 0.20 (0.70) (0.90) (0.10) (3.05) 6.10 0.20 9.50 0.30 2.70 0.20 (2XR0.25) 0.76 0.10 Dimensions in Millimeters (1.00) www.fairchildsemi.com 6.60 0.20 (5.34) (5.04) (1.50) FQD16N25C Rev. A 7 MIN0.55 FQD16N25C 250V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 Preliminary No Identification Needed Full Production Obsolete Not In Production 8 FQD16N25C Rev. A www.fairchildsemi.com |
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